Silicon Carbide (SiC) Polished to Mirror Finish

CVD Silicon Carbide theoretically dense and intrinsically pure, is available as lapped or polished substrates and wafers from 2" diameter up to 300mm diameter with surface finishes to better than 10 angstroms, while maintaining a 1/4 wave flatness depending on thickness and size.

This material is ideal for various applications, especially as scan mirrors and movable optics for space telescopes due to its light weight, high flexure strength, rigid structure and thermal characteristics.

A common substrate size, frequently in stock, is 2"x 2"(+/- 0.005") x 0.025" (+/- 0.0005") thick, polished on one side to 1 microinch Ra.

A common wafer size, frequently in stock is 100 mm diameter, polished on one side.

Thinnest wafers and substrates available: 0.001" (25 microns).

With our precision dicing capability, we can produce Silicon Carbide dice as small as 0.005" x 0.005" x 0.001" thick.

Typical CVD Silicon Carbide properties are:

• Density 3.21
• Thermal Conductivity 300 W/mK
• Coefficient of Thermal Expansion (CTE) X10^-6
  at 20°C - 2.2/°C
  at 1000°C - 4.0/°C

Please call or e-mail for a quotation to meet your requirements.

Return to Home Page Optical polishing, lapping, dicing and optical components polishing

Updated: 27 September 2008

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