Properties of sapphire and sapphire wafers

Typical Properties of Sapphire Wafers and Substrates

Sapphire is a single crystal Al2O3 with a hexagonal (rhombohedral) crystal structure. Sapphire wafers and
sapphire substrates are available in C, R, A and M plane orientations.

Sapphire related services include, Sapphire wafer back-thinning, edge grinding, edge rounding, diameter reduction, hole drilling, chamfering, blending and polishing, v-grooves, surface pyramid structures, laser slag removal, slots and steps.

Technical Data Sheet

Name Orientation
C-Plane (0 Degree) 0001
R-Plane 1-102
A-Plane (Perpendicular to C) 11-20
M-Plane (Perpendicular to C and A)  
Mechanical Properties  
Density at 20°C 3.98 g/cm3
Hardness Knoop: 1500
Mohs: 9
Tensile Strength 275 - 400 MPa
40,000 - 58,000 psi
Flexural Strength 480 - 895 MPa
70,000 - 130,000 psi
Compression Strength (ultimate) 2.0 GPa / 300,000 psi
Young's Modulus (elasticity) 345 GPa / 50 x 106 psi
Bulk Modulus (compression) 250 GPa / 36 x 106 psi
Shear Modulus (rigidity) 145 GPa / 21 x 106 psi
Modulus of Rupture 350 - 690 MPa / 50,000 - 100,000 psi
Poisson's Ratio .29
Melting Point 2040°C / 3700°F / 2310 K
   
Thermal Properties  
Thermal Conductivity:  
Perpendicular to C at 23°C: 23.0 W/m°C
at 77°C: 16.8 W/m°C
Parallel to C at 24°C: 25.8 W/m°C
at 70°C: 17.35 W/m°C
Specific Heat at 18°C: 756 J/kg°C
at -182°C: 104 J/kg°C
   
Electrical Properties
Volume Resistivity at 25°C 1014 ohm/cm
Dielectric Strength 4.8 x 105
Dielectric Constant:  
   Perpendicular to C 9.4
   Parallel to C 11.5
Dissipation Factor 10-4tan δ


CTE (Coefficient of Thermal Expansion), x 106/ °C
Temp °C Perpendicular to C Parallel to C
70 6.95 5.90
100 7.08 6.05
200 7.66 6.60
300 8.30 7.32
400 9.00 8.07
500 9.63 8.88
600 10.45 9.77

 

 

 


Related Sapphire Web pages:

 

 

 

 

 

 

 

 

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